Surface Characterization of Chemically Treated Cu(In,Ga)Se2 Thin Films.
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- Hashimoto Yasuhiro
- Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Kohara Naoki
- Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Negami Takayuki
- Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Nishitani Mikihiko
- Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Wada Takahiro
- Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
Bibliographic Information
- Other Title
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- Surface Characterization of Chemically
- Surface Characterization of Chemically Treated Cu(In, Ga)Se<sub>2</sub> Thin Films
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Abstract
The surfaces of Cu-rich and stoichiometric (slightly [In, Ga]-rich) Cu(In, Ga)Se2 (CIGS) thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). At the surface of the Cu-rich and stoichiometric CIGS films, Cu2- xSe and Cu(In, Ga)3Se5 exist, respectively. The films were treated using KCN and NH3 aqueous solutions. In the Cu-rich film, the treatment in the KCN solution completely eliminated the Cu2- xSe impurity and the treatment in the NH3 solution removed Cu2- xSe only at the front surface. In the stoichiometric CIGS film, the NH3 treatment removed Cu(In, Ga)3Se5 from the surface. The recombination of the carriers occurs more in the heterojunction of the CdS/NH3-treated CIGS system than in that of the CdS/as-deposited CIGS system.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (9A), 4760-4764, 1996
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282681226497024
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- NII Article ID
- 10004613381
- 130004522863
- 210000039689
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL BIB ID
- 4060163
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed