Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55μm Intersubband Transition in AlGaN/GaN Quantum Wells

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  • Suzuki Nobuo
    Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan
  • Iizuka Norio
    Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan

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タイトル別名
  • Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-.MU.m Intersubband Transition in AlGaN/GaN Quantum Wells.
  • Feasibility Study on Ultrafast Nonlinea

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The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated. The 1.55-µ m ISBT is shown to be feasible because of its large conduction band discontinuity. The intersubband relaxation time at 1.55-µ m is estimated to be 80 fs, which is about 30 times shorter than that in InGaAs QWs. The third order nonlinear susceptibility is estimated to be 1.6× 10-15 m2· V-2 for N=1× 1018 cm-3. These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches.

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