Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silicon-on-Insulator.

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  • Sumida Hitoshi
    Advanced Device Technology Laboratory, Fuji Electric Corporate Research and Development Ltd., 4–18–1 Tsukama, Matsumoto, Nagano 390, Japan
  • Hirabayashi Atsuo
    Advanced Device Technology Laboratory, Fuji Electric Corporate Research and Development Ltd., 4–18–1 Tsukama, Matsumoto, Nagano 390, Japan

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  • Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silico-on-Insulator
  • Noise Current Induced by Switching of a

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When a dielectric isolated lateral insulated gate bipolar transistor (DI-LIGBT) on silicon-on-insulator (SOI) is turned on or off, a displacement current occurs in the surrounding area separated by dielectric isolation, referred to as a noise current in this note. We have determined this noise current during switching of the DI-LIGBT experimentally, and have investigated the dependence of its behavior on the cell pattern of the DI-LIGBT. The high noise current can be observed at the turn-on transient of the device, and its peak depends strongly on the cell pattern of the device structure.

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