The Electronic Behaviors of Oxygen-Deficient VO2 Thin Films in Low Temperature Region.

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  • Nagashima Mitsuhiro
    Second Research Center, TRDI, Japan Defense Agency, 1–2–24 Ikejiri, Setagaya, Tokyo 154, Japan
  • Wada Hideo
    Second Research Center, TRDI, Japan Defense Agency, 1–2–24 Ikejiri, Setagaya, Tokyo 154, Japan
  • Tanikawa Kunihiro
    Second Research Center, TRDI, Japan Defense Agency, 1–2–24 Ikejiri, Setagaya, Tokyo 154, Japan
  • Shirahata Hiromichi
    Second Research Center, TRDI, Japan Defense Agency, 1–2–24 Ikejiri, Setagaya, Tokyo 154, Japan

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  • Electronic Behaviors of Oxygen-Deficien
  • The Electronic Behaviors of Oxygen-Deficient VO<sub>2</sub> Thin Films in Low Temperature Region

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The electronic properties of vanadium dioxide (VO2) thin films with various degrees of oxygen deficiency in the low temperature region were investigated by measurements of dc and ac resistance R (ω). Sample films were deposited on sapphire and SiO2/Si substrates by laser ablation at 400°C and 500°C. R (ω)-1 were fitted to the continuous time random walk ac conductivity to obtain the minimum hopping rate Γmin for each deposition condition. By the comparison of Γmin and its dependence on temperature T with dc conductivity, together with the analysis of its weak T-m dependence, the major role of hopping in dc conduction was revealed for samples at 400°C, and disorder effects introduced by low deposition temperature were suggested in the oxygen-deficient VO2 films. Deviations of m value ranged from 1/4 in Mott's variable range hopping theory were found for samples showing the broadening of conductivity transition profile reported previously, and were discussed by considering disorder effects.

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