Charge Dissipation on Chemically Treated Thin Silicon Oxide in Air.

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  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 739, Japan
  • Nakano Akihiko
    VLSI Development Laboratories, IC Group, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri 632, Japan
  • Ida Tohru
    VLSI Development Laboratories, IC Group, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri 632, Japan
  • Andoh Yasuko
    NTT Integrated Information & Energy Systems Laboratories, 3–9–11 Midori–Cho, Musashino–shi, Tokyo 180, Japan
  • Kaneko Reizo
    Department of Opto–Mechatronics, Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640, Japan
  • Sugawara Yasuhiro
    Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada–Oka, Suita 565, Japan
  • Morita Seizo
    Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada–Oka, Suita 565, Japan

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  • Charge Dissipation on Chemically Treate

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Abstract

We studied the microscopic charge dissipation of densely contact-electrified charges on silicon oxides with and without a trimethylsilyl (TMS) organosilane monolayer using a modified atomic force microscope in air. Here, the TMS film was used to change a hydrophilic surface to a hydrophobic one. As a result, for both of the deposited negative and positive charges, it was clarified that the TMS film can suppress the rapid dissipation induced by surface diffusion. For the positive charge, however, the TMS film enhanced the charge dissipation induced by recombination through the TMS film and silicon oxide.

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