Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon.

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  • Ueki Takemi
    NTT Electronics Corp., Atsugi, Kanagawa 243–01, Japan
  • Itsumi Manabu
    System Electronics Laboratories, NTT, Atsugi, Kanagawa 243–01, Japan
  • Takeda Tadao
    System Electronics Laboratories, NTT, Atsugi, Kanagawa 243–01, Japan

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タイトル別名
  • Analysis of Side-Wall Structure of Grow

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We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

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