Fatigue Characteristics of SrBi2Ta2O9 Thin Films by RF Magnetron Sputtering Method.

  • Ichinose Noboru
    Department of Materials Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo, 169, Japan
  • Watanabe Masaru
    Department of Materials Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo, 169, Japan

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  • Fatigue Characteristics of SrBi2Ta2O9 T
  • Fatigue Characteristics of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by RF Magnetron Sputtering Method

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Abstract

Ferroelectric SrBi2Ta2O9 thin films were synthesized on various substrates, such as MgO(100), glass, Pd/MgO(100) and Pd/glass by the rf magnetron sputtering method. Single-phase thin films were prepared on these substrates using a target with the starting chemical composition of SrCO3:Bi2O3:Ta2O5=0.7:1.2:1. At the higher substrate temperature of 1073 K, (h {0.5em}0 {0.5em}l) orientation was found. The hysteresis loop of the thin film on Pd(100)/MgO(100) substrate did not change up to 109 switching cycles. These properties are very attractive for nonvolatile memory application.

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