Fatigue Characteristics of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by RF Magnetron Sputtering Method
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- Ichinose Noboru
- Department of Materials Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo, 169, Japan
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- Watanabe Masaru
- Department of Materials Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo, 169, Japan
書誌事項
- タイトル別名
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- Fatigue Characteristics of SrBi2Ta2O9 Thin Films by RF Magnetron Sputtering Method.
- Fatigue Characteristics of SrBi2Ta2O9 T
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説明
Ferroelectric SrBi2Ta2O9 thin films were synthesized on various substrates, such as MgO(100), glass, Pd/MgO(100) and Pd/glass by the rf magnetron sputtering method. Single-phase thin films were prepared on these substrates using a target with the starting chemical composition of SrCO3:Bi2O3:Ta2O5=0.7:1.2:1. At the higher substrate temperature of 1073 K, (h {0.5em}0 {0.5em}l) orientation was found. The hysteresis loop of the thin film on Pd(100)/MgO(100) substrate did not change up to 109 switching cycles. These properties are very attractive for nonvolatile memory application.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (9B), 5893-5895, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681226852992
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- NII論文ID
- 110003947177
- 210000041769
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4316826
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- 本文言語コード
- en
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- データソース種別
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- JaLC
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