Fatigue Characteristics of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films by RF Magnetron Sputtering Method

  • Ichinose Noboru
    Department of Materials Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo, 169, Japan
  • Watanabe Masaru
    Department of Materials Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo, 169, Japan

書誌事項

タイトル別名
  • Fatigue Characteristics of SrBi2Ta2O9 Thin Films by RF Magnetron Sputtering Method.
  • Fatigue Characteristics of SrBi2Ta2O9 T

この論文をさがす

抄録

Ferroelectric SrBi2Ta2O9 thin films were synthesized on various substrates, such as MgO(100), glass, Pd/MgO(100) and Pd/glass by the rf magnetron sputtering method. Single-phase thin films were prepared on these substrates using a target with the starting chemical composition of SrCO3:Bi2O3:Ta2O5=0.7:1.2:1. At the higher substrate temperature of 1073 K, (h {0.5em}0 {0.5em}l) orientation was found. The hysteresis loop of the thin film on Pd(100)/MgO(100) substrate did not change up to 109 switching cycles. These properties are very attractive for nonvolatile memory application.

収録刊行物

被引用文献 (4)*注記

もっと見る

参考文献 (15)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ