Electron-Cyclotron-Resonance Sputtered SrTiO<sub>3</sub> Thin Films
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- Itsumi Manabu
- System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan
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- Ohfuji Shin–ichi
- System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan
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- Akiya Hideo
- System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan
書誌事項
- タイトル別名
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- Electron-Cyclotron-Resonance Sputtered SrTiO3 Thin Films.
- Electron Cyclotron Resonance Sputtered
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説明
SrTiO3 thin films deposited by electron-cyclotron-resonance (ECR) plasma sputtering at 400° C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO3 samples with 400° C deposition followed by 400° C oxygen annealing show low leakage current density (on the order of 10-9 A/cm2 at 5 V) and high dielectric breakdown strength (>4 MV/cm). SrTiO3 thin films deposited by ECR sputtering at 400° C are promised for capacitor dielectrics of future 1-giga-bit dynamic-random-access memories.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (9B), 4963-4966, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681226942464
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- NII論文ID
- 110003955551
- 30021825283
- 210000039735
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4060220
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可