Electron-Cyclotron-Resonance Sputtered SrTiO<sub>3</sub> Thin Films

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  • Itsumi Manabu
    System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan
  • Ohfuji Shin–ichi
    System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan
  • Akiya Hideo
    System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan

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タイトル別名
  • Electron-Cyclotron-Resonance Sputtered SrTiO3 Thin Films.
  • Electron Cyclotron Resonance Sputtered

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SrTiO3 thin films deposited by electron-cyclotron-resonance (ECR) plasma sputtering at 400° C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO3 samples with 400° C deposition followed by 400° C oxygen annealing show low leakage current density (on the order of 10-9 A/cm2 at 5 V) and high dielectric breakdown strength (>4 MV/cm). SrTiO3 thin films deposited by ECR sputtering at 400° C are promised for capacitor dielectrics of future 1-giga-bit dynamic-random-access memories.

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