Fabrication of REBa2Cu3Ox (RE=Y, Nd) Films on Yttria-Stabilized Zirconia by Liquid Phase Epitaxial Method with Ba-Cu-O-F Flux.

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  • Niiori Yusuke
    Superconductivity Research Laboratory, ISTEC, 2–4–1 Mutsuno, Atsuta–ku, Nagoya 456, Japan
  • Yamada Yasuji
    Superconductivity Research Laboratory, ISTEC, 2–4–1 Mutsuno, Atsuta–ku, Nagoya 456, Japan
  • Yoshida Yutaka
    Superconductivity Research Laboratory, ISTEC, 2–4–1 Mutsuno, Atsuta–ku, Nagoya 456, Japan
  • Hirabayashi Izumi
    Superconductivity Research Laboratory, ISTEC, 2–4–1 Mutsuno, Atsuta–ku, Nagoya 456, Japan

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  • Fabrication of REBa2Cu3Ox RE Y Nd Films
  • Fabrication of REBa<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub> (RE=Y, Nd) Films on Yttria-Stabilized Zirconia by Liquid Phase Epitaxial Method with Ba–Cu–O–F Flux

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Abstract

We have fabricated thick REBa2Cu3O x (RE=Y, Nd) films on yttria-stabilized zirconia (YSZ) substrates by a liquid phase epitaxial (LPE) method. In order to promote LPE growth, we coated the substrates with an about 150-nm-thick RE123 seed layer of the same composition as RE123 for LPE growth by pulsed laser deposition. Lowering of the LPE growth temperature using a novel Ba-Cu-O-F flux results in suppression of the reaction between the RE123 seed layer and YSZ substrate and makes LPE growth of RE123 on YSZ substrates possible. The LPE-grown films were highly c-axis oriented and showed excellent in-plane epitaxial alignment. The crystallinity of LPE-grown RE123 is better than that of predeposited thin seed layers of RE123, based on the results of X-ray diffraction analysis.

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