Atomic Force Microscopy Observation of the Initial Growth Stage and the Ferroelectric Properties of Bi<sub>2</sub>VO<sub>5.5</sub> Films on SrTiO<sub>3</sub>(100), Si(100) Substrates

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  • Yanagita Takeshi
    Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan
  • Tabata Hitoshi
    Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan
  • Kawai Tomoji
    Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan

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  • Atomic Force Microscopy Observation of the Initial Growth Stage and the Ferroelectric Properties of Bi2VO5.5 Films on SrTiO3(100), Si(100) Substrates.
  • Atomic Force Microscopy Observation of

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The initial growth mechanism of Bi2VO5.5 thin films on SrTiO3(100) has been studied using atomic force microscopy (AFM), and c-axis oriented ultra-thin films have been prepared by laser ablation. The Bi2VO5.5 films are constructed at various growth temperatures. The films deposited at 500° C grow by the step-flow mode, whereas the films deposited at 400° C grow by homogeneous nucleation. From these results, it is evident that Bi2VO5.5 grows in multiples of 0.8 nm as complete molecular units and that the top-most layer is Bi2O2. The dielectric constant of Bi2VO5.5 thin films formed on Si(100) is about 35, and a C-V plot of a Bi2VO5.5-SiO2 MIS capacitor subjected to dc polarizing voltages shows memory windows of 0.1 V against a ± 2 V gate bias.

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