Temperature Dependence of the Ideality Factor of Ba1-xKxBiO3/Nb-doped SrTiO3 All-Oxide-Type Schottky Junctions.

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  • Yamamoto Tetsuya
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305–0074, Japan
  • Suzuki Seiji
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305–0074, Japan
  • Kawaguchi Kenichi
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305–0074, Japan
  • Takahashi Kazuhiko
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305–0074, Japan

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  • Temperature Dependence of the Ideality
  • Temperature Dependence of the Ideality Factor of Ba<sub>1-x</sub>K<sub>x</sub>BiO<sub>3</sub>/Nb-doped SrTiO<sub>3</sub> All-Oxide-Type Schottky Junctions

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Current-voltage measurements were performed on Ba1-xKxBiO3/Nb-doped SrTiO3 (BKBO/STO:Nb) all-oxide-type Schottky junctions in the temperature range of 30 to 300 K. The relative permittivity ε r(E, T) of undoped SrTiO3(110) was measured as a function of both temperature and electric field. An anomalous increase in ideality factor n(T) and decrease in zero-bias barrier height Φ b0(T) with decreasing temperature were observed and were analyzed using the interfacial layer model with a thin insulating interfacial layer present between metal contact (BKBO) and semiconductor interface (STO:Nb). The increase in n(T) at low temperature can be explained by taking into account the temperature dependence of the permittivity of the depletion layer (STO:Nb). The effect of the electric field dependence of the permittivity of STO:Nb on n(T) is also discussed using an approximate electric field dependence, ε r(T, E)=b/(a+E2)1/2, where a and b are constants.

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