Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region.

DOI Web Site Web Site Web Site 被引用文献2件 参考文献70件
  • Sugiura Touko
    Department of Electrical Engineering, Toyota College of Technology, 2–1 Eisei–cho, Toyota–shi, Aichi 471, Japan
  • Hase Nobuyasu
    Department of Electrical Engineering, Toyota College of Technology, 2–1 Eisei–cho, Toyota–shi, Aichi 471, Japan
  • Iguchi Yasuhiro
    Optoelectronics R&D, Sumitomo Electric Industries Ltd, 1–1–3, Shimaya, Konohana–ku, Osaka 554, Japan
  • Sawaki Nobuhiko
    Department of Electronics, Nagoya University, Chikusa–ku, Nagoya 464–01, Japan

書誌事項

タイトル別名
  • Raman Scattering Study of InGaAsP Quate

この論文をさがす

説明

We have studied the asymmetric broadening of the Raman spectra of InxGa1-xAsyP1-y grown on InP in the immiscible region using the spatial correlation model. The compositional dependence of Raman peaks are well explained by a simple model which does not account for the immiscibility. However, the broadening of the Raman line shape is greatly enhanced in the samples in the region of the immiscibility. In particular, the asymmetry of the spectral peak of the InAs-like longitudinal optical phonon is found to be enhanced in the immiscible region. This shows that the samples which include the immiscibility have been structurally changed to suppress the uniform distribution of the long wavelength phonons.

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (70)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ