Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy.

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  • Kuball Martin
    H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
  • Mokhtari Hossein
    H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
  • Cherns David
    H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
  • Lu Jun
    Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom
  • Westwood David I.
    Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom

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Amorphous GaN films were grown at room temperature by molecular beam epitaxy on the oxide layer of GaAs(001) substrates. Their properties were investigated by transmission electron microscopy/diffraction and micro-Raman spectroscopy. A broad Raman peak at 650 cm-1 identifies the amorphous GaN. The results suggest that the local short-range bonding structure in amorphous GaN is different from crystalline GaN supporting theoretical predictions [Stumm and Drabold: Phys. Rev. Lett. 79 (1997) 677] that amorphous GaN is attractive for device applications.

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