Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method.

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  • Ichikawa Mitsuru
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
  • Tsushima Takeshi
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
  • Yamada Akira
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
  • Konagai Makoto
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan

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Hot Wire Cell method has been newly developed and successfully applied to grow polycrystalline silicon films at a low temperature with a relatively high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reaction with a heated tungsten filament placed near a substrate and polycrystalline silicon films can be deposited at a growth rate of 0.9 nm/s without hydrogen dilution. The film crystallinity is changed from polycrystalline to amorphous by decreasing the total pressure. The model calculation of the Hot Wire Cell method is carried out and it is assumed that transition of crystallinity may be due to the shift in the preferential impinged radicals. X-ray analysis clearly showed that the films grown at the filament temperature of 1700ºC have a very strong (220) preferential orientation. The films consist of large grains as well as small grains. These results suggest that the Hot Wire Cell method is a promising candidate to grow device-grade polycrystalline silicon films for photovoltaic application.

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