A Body-Effect-Assisted NOR-type(BeNOR) Multilevel Flash Memory.

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  • Wang Yen-Sen
    Microelectronics Laboratory, Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, 300
  • Tsai Hong-Ping
    Microelectronics Laboratory, Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, 300
  • Yang Evans Ching-Song
    Microelectronics Laboratory, Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, 300
  • King Ya-Chin
    Microelectronics Laboratory, Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, 300
  • Chen Steve
    Winbond Electronics Corporation, Hsin-Chu, Taiwan, 300
  • Hsu Charles Ching-Hsiang
    Microelectronics Laboratory, Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, 300

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  • Body Effect Assisted NOR type BeNOR Multilevel Flash Memory

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We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for multilevel storage application. Body effect assisted self-convergent programming employs secondary electron injection but a different operation bias from the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately programmed states are accomplished by the linear dependence of VTH on the bit-line voltage; therefore, parallel multilevel programming and elimination or reduction of bit-by-bit verification can be achieved. In this paper, programming power consumption and reliability considerations are also assessed for efficient and long-term operation.

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