Interconnect and Substrate Structure for Gigascale Integration.

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  • Morimoto Akihiro
    Department of Electronic Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
  • Kotani Koji
    Department of Electronic Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
  • Sugawa Shigetoshi
    Department of Electronic Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
  • Ohmi Tadahiro
    New Industry Creation Hatchery Center, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

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Signal wave propagation properties for a high-speed gigascale integration (GSI) system LSI featuring an operation frequency of more than 10 GHz have been analyzed and discussed by solving the cylindrical Maxwell's equations directly using a stacked coaxial structure. The results give us a good perspective and enable us to predict the ultrahigh-speed and miniaturized interconnect characteristics. The metal substrate structure is essential to suppress the substrate surface potential fluctuations and the substrate-induced signal attenuation and delay. The gas-isolated interconnect structure can effectively reduce the signal attenuation and delay. The combination of the gas-isolated interconnect and the metal substrate structure is the most promising solution for an interconnect and a substrate in GSI.

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