Morphology Change of Octahedral Oxide Precipitates in Czochralski Silicon Wafers Stretched by Tension.

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  • Ojima Kozo
    National Defense Academy, Department of Mathematics and Physics, Yokosuka 239-8686, Japan
  • Sakai Kazufumi
    National Defense Academy, Department of Mathematics and Physics, Yokosuka 239-8686, Japan
  • Yamagami Takehisa
    National Defense Academy, Department of Mathematics and Physics, Yokosuka 239-8686, Japan

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説明

Alterations in the morphology of thermally induced oxide precipitates have been studied by transmission electron microscopy in a Czochralski silicon wafer deformed by tension at 850°C and 950°C. Precipitates with complex shapes are frequently observed in specimens deformed at 950°C. Some octahedral oxide precipitates are observed to expand at the vertices of the square shape in the plan view in a specimen heat-treated at 1050°C for 8 h after deformation at 950°C. Precipitates grow on residual dislocations around octahedral oxide precipitates. These observations suggest that a large number of vacancies form in the vicinity of octahedral oxide precipitates through interaction with bypassing dislocations.

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