Nano-scale Morphology and Crystallography of Laser-Deposited TiN Thin Films.

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  • Wang Hai-Dan
    Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute,<BR> National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
  • Lu Yong-Feng
    Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute,<BR> National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
  • Mai Zhi-Hong
    Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute,<BR> National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
  • Ren Zhong-Min
    Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute,<BR> National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260

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Titanium nitride (TiN) thin films were deposited on hydrogen-terminated silicon (100) substrates by pulsed laser ablation of a ceramic TiN target (purity: 99.9%). The crystallography and properties of the thin films are related to the substrate temperature. In the investigation, scanning tunneling microscopy (STM), X-ray diffraction (XRD) and nanoindentation were used. Nano-scale morphology of the thin films deposited at 600°C was observed by STM using a platinum tip. The STM image showed that the TiN embryos have a uniform size of approximately 17 nm and grow into large clusters. The films grown at 600°C have a full-width at half maximum of the TiN (200) peak in the XRD spectrum close to 0.50º. The hardness of the thin films deposited at 600°C was as high as 26 GPa.

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