The Effect of the Interface Impurity in Fabrication of Spin Dependent Tunnel Junction.
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- Lym Heung-Soon
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- Jeon Dong-Min
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- Baek Hyung-Ki
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- Yoon Seong-Yong
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- Lee Du-Hyun
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- Yoon Dae-Ho
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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- Suh Su-Jeong
- School of Metallurgy and Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
書誌事項
- タイトル別名
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- Effect of the Interface Impurity in Fabrication of Spin Dependent Tunnel Junction
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Ferromagnetic-insulator-ferromagnetic tunneling was measured in two types of Co/Al2O3/Co/NiFe junctions. For type 1 junction (two times of interface exposure to air), the maximum tunnel junction magnetoresistance (TMR) ratio was 16.5% at room temperature. Junctions with a relatively thicker Al layer showed a lower resistance and a higher TMR ratio. Whereas, junctions with a relatively thinner Al layer showed a fast increase of barrier width. The passivation effect of Al2O3 in oxidation process enhanced the TMR ratio. As the oxidation time is increased, the coercivity of Co bottom electrode is also increased. So the effect of CoO formation in the interface of the Co bottom electrode and the Al2O3 is discussed in three possible assumptions. For type 2 junction (just one time of interface exposure to air), the maximum TMR ratio was 21% at room temperature. And the TMR ratio was decreased to half at 550 mV. These junctions have potential use as low-power field sensors and memory elements.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 40 (11), 6360-6364, 2001
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681228394496
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- NII論文ID
- 210000050217
- 110004043461
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5985985
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可