Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser-Diodes with Real Refractive Index Guided Self-Aligned Structure.

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  • Onishi Toshikazu
    Semiconductor Devices Research Center, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Imafuji Osamu
    Discrete Device Division, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Fukuhisa Toshiya
    Discrete Device Division, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Mochida Atsunori
    Semiconductor Devices Research Center, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Kobayashi Yasuhiro
    Discrete Device Division, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Yuri Masaaki
    Semiconductor Devices Research Center, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Itoh Kunio
    Discrete Device Division, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan
  • Shimizu Hirokazu
    Semiconductor Devices Research Center, Semiconductor Co., Matsushita Electric Industrial Co., Ltd., 1 Yake-machi, Kotari, Nagaokakyo, Kyoto 617-8520, Japan

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Monolithically integrated 780-nm-band and 650-nm-band self-sustained pulsating (SSP) lasers, which are desirable for simplified optical pickups in digital versatile disk (DVD) systems, have been developed for the first time. The real refractive index guided self-aligned (RISA) waveguide structure is adapted to reduce absorption loss in the current blocking layers. In order to obtain stable SSP, a saturable absorber formed in the active layer outside the current stripe, and a saturable absorbing layer above the active layer are utilized for the 780-nm-band and 650-nm-band laser diodes (LDs), respectively. Relative intensity noise less than -130 dB/Hz is maintained at temperatures of up to 80°C at an output power of 7 mW for the 650 nm band and 10 mW for the 780 nm band, which suggests that stable SSP operations have been realized.

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