Polarization Switching in Pb(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–5%PbTiO<sub>3</sub> Crystals

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  • Lee Jung-Kun
    School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
  • Yi Jae Yun
    School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
  • Hong Kug Sun
    School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
  • Park Seung-Eek
    Fraunhofer-IBMT Technology Center Hialeah, Hialeah, FL 33010, USA

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タイトル別名
  • Polarization Switching in Pb(Zn1/3Nb2/3)O3-5%PbTiO3 Crystals.
  • Polarization Switching in Pb Zn1 3Nb2 3 O3 5パーセント PbTiO3 Crystals

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The polarization switching mechanism as a function of crystallographic orientation in Pb(Zn1/3Nb2/3)O3-5%PbTiO3 (PZN-5%PT) single crystals was investigated using the switching current measurement technique. Both the activation E-field and the critical pulse width were greater if E-field for polarization switching was applied along the polar axis ‹ 111› than applied along ‹ 001›. The sideward growth was dominant in domain switching of ‹ 111› oriented crystals. The dominance of the nucleation and forward growth behavior was observed in ‹ 001› oriented crystals. The nucleation probability of reverse polarized domains is expected to be much greater in ‹ 001› crystals than in ‹ 111› crystals, being ascribed to the lower projected polarization value along the E-field direction, higher domain wall energy associated with the pseudo-monoclinic structure of domains, and large domain wall density as a consequence of averaged domain configuration. This domain switching anisotropy may be one of the origins of the fatigue anisotropy.

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