Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing.

DOI Web Site Web Site Web Site 被引用文献1件 参考文献36件
  • Sun Yong
    Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawadu, Iizuka, Fukuoka 820-8502, Japan
  • Nakatsugi Kyoichiro
    Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawadu, Iizuka, Fukuoka 820-8502, Japan
  • Miyasato Tatsuro
    Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu, Fukuoka 804-8550, Japan

この論文をさがす

抄録

An amorphous SiC/Si crystal structure is annealed at 950ºC for 30 min in hydrogen gas atmosphere. Shrinkage of the amorphous SiC film during the annealing results in stress at the SiC/Si interface. Release behaviors of the stress depend on both the thickness of the film and the orientation of the Si substrate. When the stress is more than the fracture limits of the film and the substrate, release of the stress results in breaks in the SiC/Si structure. On the other hand, when the stress is smaller than one of the two fracture limits, no break occurs. If the fracture limit of the film is smaller than that of the substrate, the breaks are straight lines and their direction depends on the orientation of the substrate. Moreover, if the fracture limit of the film is more than that of the substrate, the breaks become curved. Also, the density of the breaks, length per unit area on the substrate, depends on shrinkage of the film and orientation of the substrate. The effects of residual oxygen in the substrate are also discussed.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (36)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ