Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate.

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  • Motoki Kensaku
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Okahisa Takuji
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Matsumoto Naoki
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Matsushima Masato
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Kimura Hiroya
    Semiconductor Division, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Kasai Hitoshi
    Semiconductor Division, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Takemoto Kikurou
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Uematsu Koji
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Hirano Tetsuya
    Semiconductor Division, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Nakayama Masahiro
    Semiconductor Division, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Nakahata Seiji
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Ueno Masaki
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Hara Daijirou
    Itami Research Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
  • Kumagai Yoshinao
    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
  • Koukitu Akinori
    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
  • Seki Hisashi
    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

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説明

A freestanding GaN substrate over 2 inches in size was successfully prepared for the first time by hydride vapor phase epitaxy (HVPE) using GaAs as a starting substrate. In the experiment, a GaAs (111)A substrate with a SiO2 mask pattern on its surface was used. A thick GaN layer was grown on the GaAs substrate at 1030ºC through the openings in the SiO2 mask. By dissolving the GaAs substrate in aqua regia, a freestanding GaN substrate about 500 μm thick was obtained. The full-width at half maximum (FWHM) in the ω-mode X-ray diffraction (XRD) profile of GaN (0002) plane was 106 arcsec. The dislocation density of the GaN substrate obtained was determined to be as low as 2×105 cm-2 by plan-view transmission electron microscopy (TEM). Hall measurements revealed the n-type conductivity of the GaN substrate with typical carrier concentration and carrier mobility of 5×1018 cm-3 and 170 cm2·V-1·s-1, respectively.

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