Low Surface Recombination Velocity on Silicon Wafer Surfaces due to Iodine-Ethanol Treatment.

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  • Kurita Kazunari
    Mitsubishi Materials Silicon Corporation, R&D Center, Technology Division, 1–297 Kitabukuro–cho, Omiya, Saitama 330–0835, Japan
  • Shingyouji Takayuki
    Mitsubishi Materials Silicon Corporation, R&D Center, Technology Division, 1–297 Kitabukuro–cho, Omiya, Saitama 330–0835, Japan

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We investigated the electronic passivation of a silicon surface by iodine termination. The surface recombination velocity on iodine-terminated Si(100) was less than 10 cm/s, which is better than that obtained from oxide-passivated silicon surfaces. X-ray photoelectron spectroscopy (XPS) showed that the iodine-terminated silicon surface appeared to be covered by covalent silicon iodine bonds. This surface has no surface dangling bonds to act as recombination centers. We describe a simple model for this surface coverage phenomena of Si-X where X is a monovalently bonded iodine atom. We demonstrate the use of iodine-ethanol solution as an alternative to oxidation for controlling silicon surface chemistry.

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