Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer.

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  • Hayashi Nobuaki
    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
  • Kamiyama Satoshi
    High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
  • Takeuchi Tetsuya
    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
  • Iwaya Motoaki
    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
  • Amano Hiroshi
    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
  • Akasaki Isamu
    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
  • Watanabe Satoshi
    Agilent Laboratories, 3-2-2 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
  • Kaneko Yawara
    Agilent Laboratories, 3-2-2 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
  • Yamada Norihide
    Agilent Laboratories, 3-2-2 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan

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  • Electrical Conductivity of Low-Temperature-Deposited Al<sub>0.1</sub>Ga<sub>0.9</sub>N Interlayer

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We have realized a conductive AlGaN interlayer which was deposited at low temperatures ranging from 500 to 600°C. We studied the surface morphology and electrical property of an AlGaN/low-temperature-deposited (LT) AlGaN interlayer/GaN structure, dependent on the growth condition. It was found that the conductive LT-AlGaN interlayer and crack-free over-grown Al0.1Ga0.9N layer with a thickness of 1 μm were obtained with intermediate deposition temperature and SiH4 supply for the interlayer. Using the conductive LT-AlGaN interlayer technology, we demonstrated the low-voltage operation of a light-emitting diode. The conductive LT-AlGaN interlayer is promising technology for the realization of shorter wavelength emitters with high AlN molar fraction AlGaN cladding layers.

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