High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers.

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  • Raj Mothi Madhan
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Wiedmann Jörg
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Toyoshima Shunsuke
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Saka Yoshikazu
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Ebihara Koji
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Arai Shigehisa
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

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Fabrication techniques of high-reflectivity deeply etched semiconductor/benzocyclobutene (BCB) Bragg reflectors by multiple sequential steps of CH4/H2 reactive ion etching (RIE) and O2 plasma ashing are presented. 1.55-μm-wavelength GaInAsP/InP lasers with such reflectors exhibited low threshold current and high differential quantum efficiency with high uniformity. Threshold current as low as 7.2 mA and differential quantum efficiency as high as 50% from the front cleaved facet were obtained for a laser with a 160-μm-long active region and 15 distributed Bragg reflectors (DBRs) on the rear side. The reflectivity of the 15 DBRs was estimated to be as high as 95% from the threshold current dependence on the active region length. Finally, a preliminary aging test under room temperature CW conditions showed stable operation for more than 5000 h.

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