Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs.

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  • Pietzonka Ines
    Department of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
  • Sass Torsten
    Department of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
  • Seifert Werner
    Department of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
  • Gray Struan
    Department of Synchrotron Radiation Research, Lund University, Box 118, S-22100 Lund, Sweden
  • Mogensen Charlotte
    Department of Synchrotron Radiation Research, Lund University, Box 118, S-22100 Lund, Sweden

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The growth of InAs nanocrystals fabricated on GaAs by means of droplet epitaxy in a metal-organic chemical vapour-deposition chamber was investigated. To prevent deterioration of the droplet/substrate interface a nitride passivation layer was introduced. For this purpose both, nitridation of GaAs and GaN growth at different temperatures have been applied. In all nitrided samples and when GaN was grown at Tg = 450°C, deep pit-like defects have been found in the GaAs below the InAs islands, caused by In that diffused from the droplets into the substrate along the {111} planes. Only the growth of a thin cubic GaN layer at Tg = 550°C effectively prevented this indiffusion of indium into the substrate. The InAs islands contained stacking faults and twins that arose from defects in the underlying GaN layer. Their sidewalls do not only consist of (001) and {111} facets, but also of the commonly not observed {110} and even {11¯1} facets. The frequent occurrence of holes at the center base of the InAs islands is discussed within a growth model for the transformation of In droplets to InAs nanocrystals.

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