Loss Processes of F Atoms in Low-Pressure,High-Density CF4 Plasmas with the Admixture of H2

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  • Usui Kenichiro
    Department of Electronics, Nagoya University, Nagoya 464–8603, Japan
  • Sasaki Koichi
    Department of Electronics, Nagoya University, Nagoya 464–8603, Japan
  • Suzuki Chihiro
    Department of Electronics, Nagoya University, Nagoya 464–8603, Japan
  • Kadota Kiyoshi
    Department of Electronics, Nagoya University, Nagoya 464–8603, Japan

書誌事項

タイトル別名
  • Loss Processes of F Atoms in Low-Pressure, High-Density CF4 Plasmas with the Admxture of H2.
  • Loss Processes of F Atoms in Low-Pressure, High-Density CF<sub>4</sub> Plasmas with the Admixture of H<sub>2</sub>
公開日
1999
DOI
  • 10.1143/jjap.38.4373
公開者
The Japan Society of Applied Physics

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説明

Loss processes of F atoms in low-pressure, high-density CF4 plasmas with the admixture of H2 were investigated through absolute density and lifetime measurements using vacuum ultraviolet absorption spectroscopy. To examine the influence of surface chemistry on the destruction of F atoms, the measurements were carried out for two types of seasoning procedures; 1) the density and the lifetime for various H2 partial pressures were measured after sufficient seasoning discharges at each H2 partial pressure, and 2) the density and the lifetime for various H2 partial pressures were measured after sufficient seasoning discharges at an H2 percentage of 50%. As a result, different F atom densities and lifetimes were observed for the two types of seasoning procedures, suggesting the importance of surface chemistry in the destruction of F atoms. The gas-phase and surface loss frequencies were roughly evaluated by analyzing the experimental observations. The results indicate that, for the former seasoning procedure (usual operating condition), the surface loss dominates the gas-phase loss when a small amount of H2 (<20%) is admixed into CF4 plasmas. This means that the decrease in the F atom density arising due to the addition of a small amount of H2 is obtained by the increase in the surface loss frequency and not by the gas-phase reaction F + H2 → HF + H.

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