GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits.

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  • Nakajima Fumito
    Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
  • Kumakura Kazuhide
    Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
  • Motohisa Junichi
    Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
  • Fukui Takasi
    Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan

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  • GaAs Single Electron Transistors Fabricated by Selective Area

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Abstract

GaAs single electron transistors (SETs) are successfully fabricated using selectively grown GaAs/AlGaAs modulation doped structures by metalorganic vapor phase epitaxy (MOVPE) on (001) GaAs masked substrates. SET shows clear Coulomb oscillations and Coulomb gaps modulated by gate voltage. GaAs single electron tunneling inverter circuits having a SET and a variable load resistance are also formed. The operation of a resistance-load inverter circuit is confirmed at 1.9 K from the transport properties of this SET and input-output characteristics.

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