Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure.

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  • Wang Gang
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Ogawa Takashi
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Murase Kosuke
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Hori Kengo
    Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Soga Tetsuo
    Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Zhang Baijun
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Zhao Guangyuan
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Ishikawa Hiroyasu
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Egawa Takasi
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Jimbo Takashi
    Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Umeno Masayoshi
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It was found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.

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