Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility.

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  • Sugiura Touko
    Department of Electrical Engineering, Toyota College of Technology, 2–1 Eisei–cho, Toyota–shi, Aichi 471–8525, Japan
  • Hase Nobuyasu
    Department of Electrical Engineering, Toyota College of Technology, 2–1 Eisei–cho, Toyota–shi, Aichi 471–8525, Japan
  • Iguchi Yasuhiro
    Optoelectronics R&D, Sumitomo Electric Industries Ltd., 1–1–3 Shimaya, Konohana–ku, Osaka 554–0024, Japan
  • Sawaki Nobuhiko
    Department of Electronics, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan

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The Raman intensities of optical phonon modes in InxGa1-xAsyP1-y quaternary alloys lattice matched to (100) InP are studied in the compositional region of immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted in terms of the bond density. The replacement of a gallium atom with an indium atom produces a remarkable variation in the peak intensity.

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