- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility.
-
- Sugiura Touko
- Department of Electrical Engineering, Toyota College of Technology, 2–1 Eisei–cho, Toyota–shi, Aichi 471–8525, Japan
-
- Hase Nobuyasu
- Department of Electrical Engineering, Toyota College of Technology, 2–1 Eisei–cho, Toyota–shi, Aichi 471–8525, Japan
-
- Iguchi Yasuhiro
- Optoelectronics R&D, Sumitomo Electric Industries Ltd., 1–1–3 Shimaya, Konohana–ku, Osaka 554–0024, Japan
-
- Sawaki Nobuhiko
- Department of Electronics, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
Search this article
Description
The Raman intensities of optical phonon modes in InxGa1-xAsyP1-y quaternary alloys lattice matched to (100) InP are studied in the compositional region of immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted in terms of the bond density. The replacement of a gallium atom with an indium atom produces a remarkable variation in the peak intensity.
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 38 (2B), 996-1000, 1999
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1390282681230134912
-
- NII Article ID
- 110003955766
- 130004526010
- 210000046261
-
- NII Book ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL BIB ID
- 4687710
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
-
- Abstract License Flag
- Disallowed