High-Performance MOS Tunneling Cathode with CoSi<sub>2</sub> Gate Electrode

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  • Sadoh Taizoh
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
  • Zhang Yi-Qun
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
  • Yasunaga Hiroki
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
  • Kenjo Atsushi
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
  • Tsurushima Toshio
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
  • Miyao Masanobu
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan

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タイトル別名
  • High-Performance MOS Tunneling Cathode with CoSi2 Gate Electrode.

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The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

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