Chemical Vapor Deposition Based Preparation on Porous Silica Films.

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  • Uchida Yasutaka
    Department of Media Science, Teikyo University of Science and Technology,<BR> 2525 Yatsusawa, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0193, Japan
  • Katoh Takashi
    Department of Media Science, Teikyo University of Science and Technology,<BR> 2525 Yatsusawa, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0193, Japan
  • Sugahara Satoshi
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan
  • Matsumura Masakiyo
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan

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Porous silica films with a low dielectric constant, k, have been prepared from the gas phase using a mixture of Si(NCO)4, N(CH3)3 and (C6H5)2Si(N(CH3)2)2. After desorption of phenyl groups chemically bonded with Si in the as-deposited film, the film showed a porosity of 48%, and k as low as 2.5. Low-field resistivity and breakdown strength were about 1015 Ω·cm, and 1.3 MV/cm due to pinhales, respectively.

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