Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy.

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  • Takenaka Keiichi
    The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
  • Asahi Hajime
    The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
  • Koh Hideki
    The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
  • Asami Kumiko
    The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
  • Gonda Shun–ichi
    The Institute of Scientific and Industrial Research, Osaka University, 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
  • Oe Kunishige
    NTT Opto Electronics Laboratories, Atsugi, Kanagawa 243–0124, Japan present address: Kyoto Institute of Technology, Sakyo–ku, Kyoto 606–8585, Japan

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TlInGaAs quaternary layers are grown on InP substrates by gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-energy electron diffraction) patterns show (2× 2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.

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