Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy.

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  • Watanabe Katsuyuki
    National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
  • Koguchi Nobuyuki
    National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
  • Gotoh Yoshihiko
    Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan

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We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.

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