The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs.

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  • Ogawa Masahiro
    Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
  • Funato Mitsuru
    Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
  • Ishido Teruki
    Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
  • Fujita Shizuo
    Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
  • Fujita Shigeo
    Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan

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  • Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs

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Abstract

Cubic GaN (c-GaN) layers are grown on GaAs(001) substrates by metalorganic vapor phase epitaxy. To attain high-quality c-GaN, we investigate growth conditions and buffer layer structures. It is found that by increasing the growth rate from 0.35 to 1.05 μm/h, the growth temperature region where the c-GaN composition reaches its maximum (90%) is shifted from 700–800ºC to 850–900ºC. Regarding the film properties, excitonic emission and high resistivity are realized with the faster growth rate. Subsequently, the c-GaN composition is improved by the use of a double buffer layer (DBL) structure instead of the conventional single buffer layer structure without degrading the achieved optical and electrical properties. The DBL structure preserves a relatively high c-GaN composition even in thick layers.

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