Orientation Control of Metalorganic Chemical Vapor Deposition-Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Film by Sequential Source Gas Supply Method

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  • Watanabe Takayuki
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,<BR> Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
  • Funakubo Hiroshi
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,<BR> Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

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  • Orientation Control of Metalorganic Chemical Vapor Deposition-Bi4Ti3O12 Thin Film by Sequential Source Gas Supply Method.

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C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

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