Preparation of RhO<sub>2</sub> Thin Films by Reactive Sputtering and Their Characterizations

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  • Kato Kiyohiko
    Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
  • Abe Yoshio
    Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
  • Kawamura Midori
    Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
  • Sasaki Katsutaka
    Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan

書誌事項

タイトル別名
  • Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations.
公開日
2001
DOI
  • 10.1143/jjap.40.2399
公開者
The Japan Society of Applied Physics

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説明

Thin films of RhO2, which belongs to the family of conducting platinum group metal oxides, were prepared by reactive sputtering. Influences of sputtering parameters, such as rf power and substrate temperature, and postdeposition annealing on crystallinity, chemical bonding state and resistivity of the deposited films were studied, in order to obtain low-resistivity RhO2 thin films. The resistivity of the deposited films decreased with decreasing rf power. Plasma emission measurement suggested that oxidation of Rh proceeded under the low rf power condition. Poorly-crystallized conducting RhO2 thin films with resistivity of 300-500 μΩcm were prepared at substrate temperatures below 150ºC; the resistivity of the films increased with increasing substrate temperature above 150ºC due to the formation of semiconducting Rh2O3. After postdeposition annealing in oxygen atmosphere at up to 700ºC, well-crystallized RhO2 films were formed, and the minimum resistivity of 80 μΩcm was obtained.

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