Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy.

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  • Kato Tomonobu
    Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
  • Honda Yoshio
    Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
  • Kawaguchi Yasutoshi
    Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
  • Yamaguchi Masahito
    Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
  • Sawaki Nobuhiko
    Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan

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A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

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