Theoretical Comparison of Electronic and Lattice Thermal Conductivities in n-type (Bi<sub>1-<i>x</i></sub>Sb<sub><i>x</i></sub>)<sub>2</sub>Te<sub>3</sub>Solid Solutions

  • Je Koo-Chul
    The School of Materials Science, Japan Advanced Institute of Science and Technology
  • Im Hee-Joong
    The School of Materials Science, Japan Advanced Institute of Science and Technology
  • Kim Dong-Hwan
    The School of Materials Science, Japan Advanced Institute of Science and Technology
  • Kang Young-Jin
    The School of Materials Science, Japan Advanced Institute of Science and Technology
  • Ahn Jeung Sun
    The School of Materials Science, Japan Advanced Institute of Science and Technology
  • Kim Hwa-Min
    Department of Physics and Semiconductor Science, Catholic University of Daegu
  • Mitani T.
    The School of Materials Science, Japan Advanced Institute of Science and Technology

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  • Theoretical Comparison of Electronic and Lattice Thermal Conductivities in n-type (Bi1-xSbx)2Te3 Solid Solutions

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説明

We have theoretically investigated the electronic and lattice thermal conductivities for various carrier concentrations in the n-type (Bi1−xSbx)2Te3 solid solutions using the two-band conduction model with a mixed scattering mechanism. For operation of thermoelectric cooling at low temperatures, the carrier concentration must be controlled so that the electronic thermal conductivity makes the total thermal conductivity have the minimum at an applicable temperature. Under this condition, the electronic thermal conductivity is over 25% of the lattice thermal conductivity and results in the gradual increase of the thermal conductivity. These effects are almost independent of the composition x under the same carrier concentration.

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