157nm Lithography for 70nm Technology Node.

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  • Itani Toshiro
    Semiconductor Leading Edge Technologies, Inc., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan

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For sub-70 nm semiconductor devices, 157 nm lithography with a F2 laser is one of the most promising technologies. Many efforts to improve each critical component of 157 nm lithography, such as the exposure tool, resist material, resist processing and mask materials, have been reported. In order to realize sub-70 nm semiconductor devices, not only the development of each technology but also lithography process integration is very important. Also, the time line for establishing a total system of 157 nm lithography becomes more critical. In previous studies, we investigated each key component of 157 nm lithography, such as the resist materials, resist processing, mask material and exposure tool. In this paper, we describe the recent progress in 157 nm lithography, including the single-layer resist materials, surface imaging resist, resist processing, microstepper, and mask materials. As a result, several candidates for realizing 70 nm-node devices were obtained.

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