Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer.

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  • Lee Young-Bae
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Wang Tao
    Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan
  • Liu Yu-Huai
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Ao Jin-Ping
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Li Hong-Dong
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Sato Hisao
    Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360, Japan
  • Nishino Katsushi
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Naoi Yoshiki
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

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Abstract

We report a new method of increasing the output power of an ultraviolet light-emitting diode (UV-LED) based on an AlGaN/GaN single quantum well (SQW). In this method, a thin Ga droplet layer is intentionally grown before the growth of an AlGaN/GaN SQW active layer. The Ga droplet layer causes a spatial and compositional fluctuation on the SQW active layer, which induces exciton localization in the potential minima. The LEDs fabricated with the Ga droplet layer show an emission peak of 353 nm and a higher optical output power than those of the same structure but without the Ga droplet layer.

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