Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film.

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  • Du Xiaolong
    Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Murakami Masashi
    Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Iwaki Hiroyuki
    Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Ishitani Yoshihiro
    Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Yoshikawa Akihiko
    Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

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ZnO films were grown on (0001) sapphire substrates using rf plasma-assisted molecular beam epitaxy. Distinct rotation domain structures were observed in ZnO films grown on Al-terminated or O-terminated sapphire surfaces. Therefore, the Ga pre-exposure process was adopted to modify the sapphire (0001) surface just before the buffer layer growth. It was revealed that the sapphire surface modification by Ga pre-exposure had significant effects on the elimination of the rotation domains in the ZnO epilayer. The full width at half maximum (FWHM) of the X-ray diffraction (XRD) rocking curve of the ZnO (002) reflection plane was as narrow as 67 arcsec. Consequently, a high-quality ZnO film with very good optical and electrical properties was obtained.

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