Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film.
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- Du Xiaolong
- Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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- Murakami Masashi
- Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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- Iwaki Hiroyuki
- Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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- Ishitani Yoshihiro
- Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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- Yoshikawa Akihiko
- Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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説明
ZnO films were grown on (0001) sapphire substrates using rf plasma-assisted molecular beam epitaxy. Distinct rotation domain structures were observed in ZnO films grown on Al-terminated or O-terminated sapphire surfaces. Therefore, the Ga pre-exposure process was adopted to modify the sapphire (0001) surface just before the buffer layer growth. It was revealed that the sapphire surface modification by Ga pre-exposure had significant effects on the elimination of the rotation domains in the ZnO epilayer. The full width at half maximum (FWHM) of the X-ray diffraction (XRD) rocking curve of the ZnO (002) reflection plane was as narrow as 67 arcsec. Consequently, a high-quality ZnO film with very good optical and electrical properties was obtained.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 41 (10A), L1043-L1045, 2002
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681231465984
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- NII論文ID
- 210000052513
- 110006350818
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6306972
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可