Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As.

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  • Ohya Shinobu
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shimizu Hiromasa
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Higo Yutaka
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Sun Jiaming
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Tanaka Masaaki
    CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012, Japan

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Abstract

We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs substrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ∼ 30 K, exhibiting a strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III-V opto-electronics.

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