Oxide Confined Collector-Up Heterojunction Bipolar Transistors

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  • Chen Wen-Bin
    Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University
  • Su Yan-Kuin
    Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University
  • Lin Chun-Liang
    Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University
  • Wang Hsin-Chuan
    Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University
  • Su Juh-Yuh
    Department of Electrical Engineering, National Tsing Hua University
  • Wu Meng-Chi
    Department of Electrical Engineering, National Tsing Hua University
  • Chen Shi-Ming
    Epitech Technology Corporation
  • Chen Hong-Ren
    Epitech Technology Corporation

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Description

An oxide confined collector-up heterojunction bipolar transistor (HBT) is proposed to reduce the leakage current and the parasitic capacitance in the extrinsic region. Two-dimensional numerical simulations were used to demonstrate the electrical characteristics of the new HBT structure. The current gain was evidently increased from 0.63 to 42 after the thin Al0.98Ga0.02As layer was appropriately oxidized, and the forward transport characteristics of the HBT were not obviously degraded by the added thin Al0.98Ga0.02As layer. The current gain of the HBT was only decreased about 3% to 4% due to the defects existing at the interfaces between the Al-oxide layer and its adjacent layers. Therefore, the proposed oxide confined collector-up HBT is expected to achieve excellent performance in applications of high frequency amplifiers.

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