On the Carrier Concentration and Hall Mobility in GaN Epilayers.

DOI Web Site Web Site 被引用文献1件 参考文献20件
  • Ko Chih-Hsin
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
  • Chang Shoou-Jinn
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
  • Su Yan-Kuin
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
  • Lan Wen-How
    Materials R&D Center, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan, R.O.C.
  • Chen Jone F.
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
  • Kuan Ta-Ming
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
  • Huang Yao-Cong
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
  • Chiang Chung-I.
    Materials R&D Center, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan, R.O.C.
  • Webb Jim
    Institute for Microstructural Sciences, National Research Council, Montreal Rd., Ottawa, Canada K1A 0R6
  • Lin Wen-Jen
    Materials R&D Center, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan, R.O.C.

この論文をさがす

説明

The dependence of Hall mobility and carrier concentration in GaN epilayers on light illumination was examined. It was found that Hall mobility and electron concentration both increased after illumination with red laser (632.8 nm) and green laser (530 nm). However, no changes in Hall mobility and carrier concentration were found, if IR-laser (850 nm) was used. The results reveal that deep-level defects were excited and hence extra carriers were generated by light illumination. The influence is more pronounced for thinner films. These observations indicate that donor-like defect-related states were located 1.48 to 2.33 eV below the conduction band edge.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (20)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ