Dose-Dependent Etching Selectivity in SiO<sub>2</sub>by Focused Ion Beam
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- Sadoh Taizoh
- Department of Electronics, Kyushu University
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- Eguchi Hiroomi
- Department of Electronics, Kyushu University
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- Kenjo Atsushi
- Department of Electronics, Kyushu University
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- Miyao Masanobu
- Department of Electronics, Kyushu University
書誌事項
- タイトル別名
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- Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
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抄録
The dose-dependent etching characteristics of SiO2 films irradiated with 40 keV Si2+ focused ion beams (FIBs) were comprehensively investigated. The etching rate in a buffered HF increased with increasing dose (8×1013–1×1015 cm−2), however it decreased for doses exceeding a critical value (1×1015 cm−2). The maximum selectivity of the etching rate of the irradiated region to the nonirradiated region was about 14, which was obtained for irradiation with the critical dose. The numerical simulation indicated that all of the Si atoms in SiO2 were displaced by irradiation with this critical dose. A simple model for the etching characteristics was proposed, in which the enhancement of etching by vacancies and the retardation of etching by implanted Si atoms were considered. The etching characteristics obtained by the experiments were quantitatively explained by the model.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (4B), 1855-1858, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681232738176
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- NII論文ID
- 130004530687
- 10010800506
- 210000053188
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6522973
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 使用不可