Effects of O2 Gas on Reaction Mechanisms in the Chemical Vapor Deposition of (Ba, Sr) TiO3 Thin Film.

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  • Yamamuka Mikio
    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
  • Momose Shun
    Department of Electronic Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
  • Nakamura Toshihiro
    Department of Electronic Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
  • Tachibana Kunihide
    Department of Electronic Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
  • Takada Hiroshi
    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

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  • Effects of O<sub>2</sub>Gas on Reaction Mechanisms in the Chemical Vapor Deposition of (Ba, Sr)TiO<sub>3</sub>Thin Film

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Abstract

Effects of O2 gas on reaction mechanisms in the chemical vapor deposition (CVD) of (Ba, Sr)TiO3 [BST] film were studied by investigating the atomic incorporation rates of Ba, Sr, and Ti. The atomic incorporation rates were measured using an X-ray fluorescence method for BST film prepared for several molar source supply ratios with different O2 flow rates of 0.1, 0.5, and 1.0 slm. In the experiments, these rates were found to increase monotonically with increasing O2 flow rate in flux regions where incorporation reactions might be dominated kinetically. This suggested that the supplied O2 gas might affect the adsorption of film precursors onto the film surface in the CVD of BST. From the obtained experimental results, we proposed a CVD model, in which some precursors adsorbed on the film surface form adsorptive sites, and that successive precursors are adsorbed thereon. The supplied O2 gas contributes towards the formation of the adsorptive sites; the Ba and Sr precursors release their own oxygen and receive oxygen from the supplied O2 gas, and then the oxidized precursors form adsorptive sites. On the other hand, the Ti precursors form adsorptive sites by holding their own oxygen on the film surface. Then, under the proposed model, atomic incorporation rates and overall sticking coefficients for BST film depositions were numerically calculated. The calculated results were found to be in good agreement with the experimental results for several molar source ratios with different O2 flow rates of 0.1, 0.5, and 1.0 slm.

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