Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP

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  • Suemune Ikuo
    Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
  • Shimozawa Togo
    Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
  • Uesugi Katsuhiro
    Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
  • Kumano Hidekazu
    Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
  • Machida Hideaki
    Trichemical Laboratory, 8154-217 Uenohara, Kitatsurugun, Yamanashi 409-0112, Japan
  • Shimoyama Norio
    Trichemical Laboratory, 8154-217 Uenohara, Kitatsurugun, Yamanashi 409-0112, Japan

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タイトル別名
  • Indium Phosphide & Related Materials. Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP.

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Erbium (Er) doping in GaNP during growth by metalorganic molecular-beam epitaxy was studied. Nitrogen (N) doping in GaP was possible up to ∼ 2% and exhibited large band-gap bowing consistent with previous reports. Er was doped in GaNP to study the codoping effect of Er and N. Er concentration was estimated to be about 0.2-0.8 at.% depending on the Er Knudsen cell temperature. Er doping in GaNP resulted in photoluminescence (PL) spectra similar to that of GaP in the visible-wavelength region, but the PL subpeaks at energies near the longitudinal-optical-phonon replica observed in GaP exhibited variations with Er doping. Although no sharp Er emissions originating from the 4f-4f inner-shell transitions were observed with the codoping, intense wide-band infrared (IR) luminescence covering the wavelength range from 1.1 to 1.6 μm was observed with the codoping of Er and N. The IR luminescence was linearly increased for the higher excitations, while the corresponding IR-PL intensity in undoped GaNP was weak and easily saturated.

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